Conference 7135 - Proceedings of SPIE Volume 7135 Dates: Sunday-Thursday 26 - 30 October 2008 Conference Chair Yi Luo, Tsinghua Univ. (China) Conference Co-Chairs Jens Buus, Gayton Photonics Ltd. (United Kingdom); Fumio Koyama, Tokyo Institute of Technology (Japan); Yu-Hwa Lo, Univ. of California/San Diego (USA) Program Committee Alfred R. Adams, Univ. of Surrey (United Kingdom); Markus-Christian Amann, Technische Univ. Muenchen (Germany); Dan Botez, Univ. of Wisconsin/Madison (USA); Kent D. Choquette, Univ. of Illinois at Urbana-Champaign (USA); Jen-Inn Chyi, National Central Univ. (Taiwan, China); David S. Citrin, Georgia Institute of Technology (USA); Yong-Zhen Huang, Institute of Semiconductors (China); Akihiko Kasukawa, The Furukawa Electric Co., Ltd. (Japan); Yong-Hee Lee, Korea Advanced Institute of Science and Technology (South Korea); Kikuo Makita, NEC Corp. (Japan); Yoshiaki Nakano, The Univ. of Tokyo (Japan); Markus Pessa, Tampere Univ. of Technology (Finland); Min Qiu, Kungliga Tekniska H?gskolan (Sweden); Berthold E. Schmidt, Bookham AG (Switzerland); Meint K. Smit, Technische Univ. Eindhoven (Netherlands); Shinji Tsuji, Hitachi, Ltd. (Japan); Shih-Yuan Wang, Hewlett-Packard Labs. (USA); Lech Wosinski, Kungliga Tekniska H?gskolan (Sweden); Ming C. Wu, Univ. of California/Berkeley (USA); Chih-Chung Yang, National Taiwan Univ. (Taiwan, China); Siyuan Yu, Univ. of Bristol (United Kingdom)

Monday 27 October

Opening Ceremony Date: Monday 27 October Time: AM 8:30 - AM 9:15

Plenary Session Date: Monday 27 October Time: AM 9:15 - AM 11:45 View plenary presentation details

Nanophotonic Devices  (Plenary) Paper AOC08PLS-101

Author(s): Dieter Bimberg, Technische Univ. Berlin (Germany) Universal self-organization and self-ordering effects at surfaces of semiconductors lead to the formation of coherent zero-dimensional clusters called quantum dots (QDs). The electronic and optical properties of QDs, being smaller than the de-Broglie-wavelength in all three directions of space are closer to those of atoms in a dielectric cage than of solids. Their delta-function-like energy eigenstates are only twofold (spin) degenerate. All few particle excitonic states are strongly Coulomb correlated. Their energies depend on shape and size of the dots, such that positive or negative biexciton binding energies or fine-structure splitting caused by exchange interaction appear. Consequently, single QDs present the most practical possible basis of emitters of single polarized photons (Q-bit emitters) on demand or entangled photons via the biexciton-exciton cascade for future quantum cryptography and communication systems. Many QDs as active materials are extremely promising for novel optoelectronic devices, like edge and surface emitting lasers, amplifiers with properties going far beyond devices based on higher dimensional systems. Semiconductor nanotechnologies transform presently to enabling technologies for new economies. It is expected that first commercialization of nanophotonic devices and systems will appear soon. High bit rate and secure quantum cryptographic systems, nano-flash memories, or ultra-high speed nanophotonic devices for future optical interconnects, the Terabus, and 100 Gbit/s Ethernet might present some of the first fields of applications of nanophotonic devices.

Photonic Challenges Toward Future Broadband Society  (Plenary) Paper AOC08PLS-102

Author(s): Yoshio Itaya, NTT Photonics Labs. (Japan) The rapid progress in information communications technology (ICT) has brought about significant changes in the structure of society including the convergence of services, an expansion of business, and globalization. These changes have been supported by the increasing availability of broadband services. The total number of DSL, cable and FTTH subscribers in Japan had reached almost 28 million by the end of September 2007. The number of FTTH subscribers alone had exceeded 11.3 million. This implies that super-high-speed broadband access has made deep inroads into many aspects of our daily lives. The increase in broadband access has promoted the use of the Internet thus leading to the rapid growth of Internet traffic. The total download traffic of broadband access users in Japan was estimated to be 700 Gb/s as of May 2007. Major reasons for this growth are the rise in the use of peer-to-peer file exchange applications and the increasing popularity of video viewing sites. We must establish a network that is both simple and accessible. In addition, there is a growing need for high quality services that are both secure and flexible, and this will drive the transition from telephony to a secure fully IP-based network. A secure fully IP network has four features; (1) an open interface that provides interconnection with various providers and the joint creation of services, (2) high quality service support applications that require high communication quality, (3) security functions such as identification and authentification to provide protection from spoofing and attacks, and (4) high reliability by providing redundancy, controlling traffic and giving priority. This secure IP network can be used as the infrastructure for a wide range of social, business and individual services. Photonic technology is the key to creating secure broadband networks. An 80-channel×10 Gbit/s WDM system with a capacity close to 1 Tbit/s is currently being operated in a long haul network. Moreover, 40 Gb/s optical transport network systems have already been installed commercially. Recently, phase shift keying (PSK) and a multilevel modulation format have been extensively investigated with a view to increasing the transmission capacity. The standardization of the 100 Gbit/s Ethernet interface (100 GbE) is under way. In metropolitan areas, the network has a fiber-ring configuration and a reconfigurable optical add/drop multiplexer (ROADM) as a node. The ROADM provides flexibility in terms of path provisioning and scalability. Research on optical burst switching and optical packet switching has accelerated in response to traffic growth. This talk will review innovative network technologies and their applications.

The rapid progress in information communications technology (ICT) has brought about significant changes in the structure of society including the convergence of services, an expansion of business, and globalization. These changes have been supported by the increasing availability of broadband services. The total number of DSL, cable and FTTH subscribers in Japan had reached almost 28 million by the end of September 2007. The number of FTTH subscribers alone had exceeded 11.3 million. This implies that super-high-speed broadband access has made deep inroads into many aspects of our daily lives. The increase in broadband access has promoted the use of the Internet thus leading to the rapid growth of Internet traffic. The total download traffic of broadband access users in Japan was estimated to be 700 Gb/s as of May 2007. Major reasons for this growth are the rise in the use of peer-to-peer file exchange applications and the increasing popularity of video viewing sites. We must establish a network that is both simple and accessible. In addition, there is a growing need for high quality services that are both secure and flexible, and this will drive the transition from telephony to a secure fully IP-based network. A secure fully IP network has four features; (1) an open interface that provides interconnection with various providers and the joint creation of services, (2) high quality service support applications that require high communication quality, (3) security functions such as identification and authentification to provide protection from spoofing and attacks, and (4) high reliability by providing redundancy, controlling traffic and giving priority. This secure IP network can be used as the infrastructure for a wide range of social, business and individual services. Photonic technology is the key to creating secure broadband networks. An 80-channel×10 Gbit/s WDM system with a capacity close to 1 Tbit/s is currently being operated in a long haul network. Moreover, 40 Gb/s optical transport network systems have already been installed commercially. Recently, phase shift keying (PSK) and a multilevel modulation format have been extensively investigated with a view to increasing the transmission capacity. The standardization of the 100 Gbit/s Ethernet interface (100 GbE) is under way. In metropolitan areas, the network has a fiber-ring configuration and a reconfigurable optical add/drop multiplexer (ROADM) as a node. The ROADM provides flexibility in terms of path provisioning and scalability. Research on optical burst switching and optical packet switching has accelerated in response to traffic growth. This talk will review innovative network technologies and their applications.

Technologies for a Renaissance in Long-Distance Optical Communications  (Plenary) Paper AOC08PLS-103

Author(s): Robert W. Tkach, Alcatel Lucent (United States) Since the collapse of the market for optical communications equipment at the beginning of the millennium, there has been diminished interest and investment in technologies for long-distance optical transmission. This is largely a result of the large capacities afforded by wavelength-division multiplexed systems. The systems deployed early in the decade had capacities comparable to the total network traffic. This situation is about to change. Those systems are becoming full now, and growth in traffic indicates that capacity of systems will become a crucial factor in the years ahead. This talk will examine these trends, project the sorts of systems needed in the next decade, and discuss the technologies that will enable them.

Challenges of Optical Broadband Network  (Plenary) Paper AOC08PLS-104

Author(s): Hequan Wu, Chinese Academy of Engineering (China) The development situation of network services is firstly reviewed in this presentation. The evolution features of network services with IP, broadband, streaming, P2P (Peer to Peer) and mobility are described. The presentation analyses extension trend on network bandwidth demand. The challenges on optical broadband network are discussed from network architecture, switching system, trunk transmission system, and access network aspects. Relative issues with optical broadband network development are also involved such as path scheduling across difference carriers and business model as well as regulations, especially overlapping responsible for supervision of communications and broadcast administrations have been restricted broadband popularization. Finally, the presentation also gives a brief overview of representative projects within research activities on broadband network in China including the CNGI (China’s Next Internet Demonstration Project).

Lunch Break AM 11:45 - PM 1:15

Session 1a:  Photonic Integration I Date: Monday 27 October Time: PM 1:15 - PM 3:00

Hybrid integration for advanced photonic devices (Invited Paper)  Paper 7135-1

Author(s): Alistair J. Poustie, Ctr. for Integrated Photonics Ltd. (United Kingdom) Hybrid photonic integration with passive assembly techniques allows compact optical modules to be realised with high optical performance and low packaging cost. Recent advances in integrating semiconductor optical amplifiers into practical all-optical signal processing modules is described, with applications from optical memory to sophisticated burst-mode optical regenerators.

Recent progress on arrayed waveguide grating multi/demultiplexers (Invited Paper)  Paper 7135-2

Author(s): Tsutomu Kitoh, Nippon Telegraph and Telephone Corp. (Japan)

Using a micromolding process to fabricate polymeric wavelength filters  Paper 7135-3

Author(s): Chi-Hsing Lin, Szu-Wei Lu, Wei-Ching Chuang, Wei-chih Hung, Yu-Tai Huang, Chi-Ting Ho, National Formosa Univ. (Taiwan) A procedure for fabricating a high aspect ratio periodic structure on a UV polymer at submicron order using holographic interferometry and molding processes is described. First, holographic interferometry using a He-Cd (325nm) laser was used to create the master of the periodic line structure on an i-line sub-micron positive photoresist film. A 20nm nickel thin film was then sputtered on the photoresist. Final line pattern on a UV polymer was form from casting against the master mold. Finally, a SU8 polymer was spun on the polymer grating to form a planar waveguide. The measurement results show that the waveguide length could be reduced for the high aspect ratio characteristic of the gratings.

Progress with the uncooled electroabsorption modulator integrated DFB laser (Invited Paper)  Paper 7135-4

Author(s): Shigeki Makino, Kazunori Shinoda, Takeshi Kitatani, Takashi Shiota, Shigehisa Tanaka, Masahiro Aoki, Hitachi, Ltd. (Japan); Noriko Sasada, Kazuhiko Naoe, Opnext Japan, Inc. (Japan) We have developed the uncooled EA/DFB lasers for small, low-power-consumption transceiver modulus. The uncooled EA/DFB laser consists of an InGaAlAs EA modulator, an InGaAsP DFB laser, and an InGaAsP waveguide. We investigated the 10.7-Gbps, 40-km transmission performances. The dynamic extinction ratio was 9.9 dB and 13.3 dB at the 10oC and 85oC. The modulated output power was more than +3.7 dBm even at 85oC. The long-term reliability was also investigated under an APC condition at an ambient temperature of 85oC with starting current of 120 mA. There was no significant degradation of the operation current up to 5000 hours.

Session 1b:  Nano Photonics I Date: Monday 27 October Time: PM 1:00 - PM 3:00

Mode behavior in microcavities (Invited Paper)  Paper 7135-5

Author(s): Yong-Zhen Huang, Yue-De Yang, Shi-Jiang Wang, Kai-Jun Che, Institute of Semiconductors (China)

Proposal for tunable optical delay line using nanophotonic tools  Paper 7135-6

Author(s): Ali Rostami, Univ. of Tabriz (Iran) All-optical tunable delay line using nanophotonic tools is proposed. Electromagnetically Induced Transparency (EIT) for this purpose is used. We show that using applied control field delay time of propagating pulse is managed.

Dependence of the photoluminescence from silicon nanostructures on the size of silicon nanoparticles  Paper 7135-7

Author(s): Wenge Ding, Wei Yu, Wenhao Qi, Guangsheng Fu, Hebei Univ. (China) The blueshift of the intense visible photoluminescence (PL) peak has been observed from silicon nanoparticles (Si NPs) embedded in silicon nitride film prepared by helicon wave plasma-enhanced chemical vapor deposition technique. However, the quantum confinement effect alone cannot explain the experimental PL data. Considering the dependence of luminescence on both the Si NPs sizes and their dispersion, we incorporated quantum confinement effects along with the effects of localized surface states to obtain an analytical expression for the PL spectra. Based on this expression, the luminescence spectra are simulated. Our results can explain experimental observations on the luminescence from silicon nanostructures.

To Be Announced (Invited Paper)  Paper 7135-8

Author(s): Connie J. Chang-Hasnain, Univ. of California/Berkeley (United States)

Quantum-dot coupled tensile-strain quantum-well polarization insensitive semiconductor optical amplifier  Paper 7135-9

Author(s): Lirong Huang, Pengfei Zhan, Shuping Fei, Dexiu Huang, Huazhong Univ. of Science and Technology (China) Quantum-dot (QD) semiconductor optical amplifier (SOA) is seriously dependent on polarization; we propose QD coupled to quantum-well (QW) structure to obtain polarization insensitivity. It is theoretically demonstrated that polarization insensitive gain can be realized if properly designed.

Size dependent phonon and exciton behaviors in ZnO quantum dots  Paper 7135-10

Author(s): Kuo-Feng Lin, National Chiao Tung Univ. (Taiwan) The measured Raman spectral shift and asymmetry for the E2 (high) mode caused by localization of optical phonons agree well with that calculated by using the modified spatial correlation model. From the resonant Raman scattering, the coupling strength between electron and longitudinal optical phonon was decreased with reducing the ZnO QD diameter. Finally, the reducing of exciton-longitudinal-optical-phonon interaction mainly results from the reducing aB with size due to the quantum confinement effect that makes the exciton less polar.

Session 2a:  Wide Bandgap Semiconductor Devices I Date: Monday 27 October Time: PM 3:30 - PM 5:30

Design and characterization issues in GaN-based light emitting diodes (Invited Paper)  Paper 7135-11

Author(s): Jong-In Shim, Hanyang Univ. (South Korea) Uniform current spreading is one of key issues to realize high brightness light emitting diodes (LEDs). 3-dimensional circuit modeling and analysis method are developed and utilized to design the geometrical pattern of electrode giving negligible current crowding in GaN-based blue LEDs. We also present a simple method to characterize the internal physical parameters in a LED such as the internal quantum efficiency, the nonradiative carrier lifetime, the radiative carrier lifetime. The method is based on both the analysis of carrier rate equation in active quantum wells and the measurement of dynamic carrier lifetime by the time resolved photoluminescence just at room temperature.

Reactive ion etching of ZnO using the H2/CH4 and H2/CH4/Ar mixtures  Paper 7135-12

Author(s): Kuang-Po Hsueh, Vanung Univ. (Taiwan) and Consultant (Taiwan) and Consultant (Taiwan); Ren-Jie Hou, Cheng-Huang Kuo, Chun-Ju Tun, National Central Univ. (Taiwan) This work investigates the RIE physical properties of the ZnO films using the H2/CH4 and H2/CH4/Ar mixtures. The suitable condition can be obtained by systematically varying the power, work pressure and the mixture gas composition. Additionally, the etching rates of the ZnO with the different annealing temperatures are discussed. The slower etching rate of ZnO with the thermal annealing might be due to the fact that the re-crystallization occurred during annealing process and thus the small crystallites coalesced together to form the larger crystallites. This result indicates that the quick etching process could be done on as-deposited ZnO film.

Receiving method of maritime light wireless communication based on LED beacons  Paper 7135-13

Author(s): Na Zhu, Qi-duan Zhong, Jiang Zhu, Jiangsu Univ. (China) LEDs (light emitting diodes) can be applied in both illumination and communication. A system of maritime wireless communication with ships based on LED beacons is proposed. The system model was set up and communication manner was analyzed. An anti-fading method combining space and time diversity is adopted due to quick signal attenuation and large noise from nature light interference. After filtering and judgment, the received diversity signals are separated to do bit comparison using Hamming Network Perception. Compared to space diversity or time diversity only, this anti-fading method can increase reliable communication distance greatly, reduce equipment cost and improve bandwidth utilization rate.

Analysis of the transmission spectra and the parameters extraction of the GaN-based films  Paper 7135-14

Author(s): Li Chao, Xue Li, Jintong Xu, Xiangyang Li, Shanghai Institute of Technical Physics (China) Nowadays，GaN-based multi-layer materials develop fast, and it is important to know their interface and optical properties for devices design and fabrication. We studied on the transmission spectra, and discussed the dependence of the transmission spectra on the parameters of the samples. Sequentially, we obtained the transmission spectra of a series of GaN samples with the wurtzite structure grown with the MOCVD technique. Simulation of the transmission spectra was done and useful information was extracted.Finally，we got the dispersion relationship of the GaN and AlGaN films, and it is compared with the results of some other research groups. It is found that the transmission spectra is a simple, useful and non-destructive method to get some important parameters of materials.

Ti/Al/Ti/Au contacts to the n-type Al0.65Ga0.35N by KOH solution processing  Paper 7135-15

Author(s): Ling Wang, Jie Chen, Shanghai Institute of Technical Physics (China) Recently, high-Al-content AlGaN alloy systems have attracted increasing attention due to their promising material properties that can be used for many optoelectronic applications, such as solid-state lighting for general illumination, solar-blind UV photodetectors for the higher solar-blind/near-UV rejection ratio of detectors, and high power/temperature/frequency electronic devices. In terms of those applications, and the urgent need to optimize the performance of the devices, excellent Ohmic contacts with low specific contact resistivity, good thermally stability, clear edge line and smooth surface morphology seem to be more and more important.In this paper,Considering mechanism of ohmic contacts and characteristic of high Al contents n-type AlGaN material, we investigated the Ti/Al/Ti/Au contacts on the n-type Al0.65Ga0.35N by KOH solution treatment.

Growth of AlN single crystals by modified PVT  Paper 7135-16

Author(s): Honglei Wu, Ruisheng Zheng, Shu Meng, Yuan Guo, Shenzhen Univ. (China) By drilling a small hole in the tungsten crucible lid, which could change the temperature distribution and form a low temperature region near the hole, the AlN crystal would first be obtained in the region of the hole. Secondly, for the geometrical restriction of the hole, it would make the AlN monomorph. Then, the single crystal near the hole take the role of seed, and gradually grow to the high quality and large size AlN single crystal. Separate AlN single crystals with diameter larger than 2 mm on the crucible lid have been obtained for the first time.

Influence of sputtering power on the properties of N-doped ZnO films  Paper 7135-17

Author(s): Jinzhong Wang, Elangovan Elamurugu, The Ctr. of Materials Research (Portugal); Nuno Franco, Eduardo Alves, Instituto Tecnológico e Nuclear (Portugal); Ana Rego, Instituto Superior Técnico (Portugal); Rodrigo Martins, Elvira Fortunato, Univ. Nova de Lisboa (Portugal) N-doped ZnO films were deposited on glass substrate at room temperature. The influence of sputtering power on their properies was invesitgated in detail. All the films are polycrystalline. X-ray Photoelectron spectroscopy (XPS) spectra reveal that the N- was incorporated into the films during sputtering. Furthermore, besides N1s peaks at ~ 396 and 398 eV, an additional peak related to N1s was observed around 402 eV for higher sputtering power. Hall measurements reveal that the most of the films are p- type conducting when the sputtering power is above 125 W. The optical transmittance studies indicated that the optical band gap changed with the sputtering power.

Session 2b:  Novel Active Devices I Date: Monday 27 October Time: PM 3:30 - PM 5:30

VCSELs: their 30 years history and new challenges (Invited Paper)  Paper 7135-18

Author(s): Fumio Koyama, Tokyo Institute of Technology (Japan) We could have the 30-year anniversary since a VCSEL was invented by Prof. Emeritus Kenichi Iga. Metro or local area networks have seen great capacity demand. Optical interconnections between network equipments are also becoming important. For these short-reach applications, important issues for light sources are small size and low cost. A vertical cavity surface emitting laser (VCSEL) has been developed since 1977. We have seen various applications including datacom, sensors, optical interconnects, spectroscopy, optical storages, printers, laser displays, laser radar, atomic clock, optical signal processing and so on. A lot of unique features have been shown, low power consumption, a wafer level testing and so on. The market of VCSELs has been growing up rapidly and they are now key devices in local area networks based on multi-mode optical fibers. Also, long wavelength VCSELs are currently attracting much interest for use in single-mode fiber metropolitan area and wide area networks. In this talk, the brief history and our recent research activities on VCSEL photonics will be reviewed. We present the wavelength engineering of VCSEL arrays for use in high speed short-reach systems, which includes the wavelength integration and wavelength control. The joint research project on ultra-parallel optical links based on VCSEL technologies will be introduced for high speed LANs of 100Gbps or higher. The small footprint of VCSELs allows us to form a densely packed VCSEL array both in space and in wavelength. The wavelength engineering of VCSELs may open up ultra-high capacity networking. Highly controlled multi-wavelength VCSEL array and novel multi-wavelength combiners are developed toward Tera-bit/s-class ultrahigh capacity parallel optical links. In addition, the MEMS-based VCSEL technology enables widely tunable operations. The recent activity with nano-mechanical tuning scheme with high contrast grating results in the increase of tuning speed. We proposed and demonstrated a “athermal VCSEL” with avoiding temperature controllers for uncooled WDM applications. The temperature dependence of long-wavelength VCSELs could be reduced by a factor of 50 with a novel thermally-actuated membrane mirror. In addition, new functions on VCSELs for optical signal processing are addressed. We present an optical nonlinear phase shifter based on a VCSEL saturable absorber. A large nonlinear phase shift could be observed in both modeling and experiments. The proposed device would be useful for mitigating fiber nonlinearities in optical domain and for optically manipulating the phase of light. Also, highly reflective periodic mirrors commonly used in VCSELs enables us to manipulate the speed of light. This new scheme provides us ultra-compact intensity modulators, optical switches and so on for VCSEL-based photonic integration. We present our results on the modeling and experiments of VCSEL-based slow light devices.

Growth of BxGa1-xAs, BxAl1-xAs, and BxGa1-x-yInyAs epilayers on (001)GaAs by LP-MOCVD  Paper 7135-19

Author(s): Qi Wang, Beijing Univ. of Posts and Telecommunications (China) High quality zinc-blende BxGa1-xAs, BxAl1-xAs and BxGa1-x-yInyAs epilayers have been successfully grown on exactly-oriented (001)GaAs substrates by low pressure metalorganic chemical vapor deposition (LP-MOCVD). Triethylboron, trimethylgallium, trimethylaluminum, trimethylindium and arsine were used as the precursors. The maximum boron composition (x) of 5.8% and 1.3% was achieved at the same growth temperature of 580oC for bulk BxGa1-xAs and BxAl1-xAs, respectively. 11K photoluminescence (PL) peak wavelength of lattice-matched BxGa1-x-yInyAs epilayer with boron composition of about 4% reached 1.24μm.

Numerical Study of Multi-longitudinal-mode Dynamics of Semiconductor Ring Lasers Subject to Ultra-Short Optical Pulse Injection  Paper 7135-20

Author(s): Dan Lu, Univ. of Bristol (United Kingdom) and Beijing Jiaotong Univ. (China); Siyuan Yu, Univ. of Bristol (United Kingdom) A novel multi-mode model suitable for semiconductor ring lasers with ultra short optical pulse injection including all nonlinear coupling components is established and used to explore the multilongitudinal-mode dynamics. A faster switching-off time is predicted.

To Be Announced (Invited Paper)  Paper 7135-21

Author(s): Yu-Hwa Lo, Univ. of California/San Diego (United States)

808nm high-power high-efficiency GaAsP/GaInP laser bars  Paper 7135-22

Author(s): Ye Wang, Li Qin, Li-jun Wang, Changchun Institute of Optics, Fine Mechanics and Physics (China) 808nm high power diode lasers have important applications in the fields of industry (laser welding, soldering, materials processing) and pumping solid-state lasers. High power high efficiency is extremely important in diode lasers. In this paper, we adopt GaAsP/GaInP strained single quantum well combined with oxygen-free Cu heatsink to fabricate high power quasi-continuous wave 808nm diode laser bars with 30% fill factor. The maximal output power is 100.9W at 106.5A. The slope efficiency is 1.08W/A and the maximum wall-plug efficiency is 57.38%. The output power of 1×3 arrays based on these laser bars reach 64.3W cw.

Optical feedback assistant current-driven polarization switching of VCSELs  Paper 7135-23

Author(s): Tsu-Chiang Yen, National Sun Yat-Sen Univ. (Taiwan); Da-Long Cheng, Shu-Te Univ. (Taiwan); Jin-Ing Tsai, Wang-Chuang Kuo, National Sun Yat-Sen Univ. (Taiwan) This research investigated the effects of optical feedback on the current-driven polarization switching of VCSELs which exhibited significant polarization-switching hysteresis loop in L-I curve. Experimental results indicated that optical feedback can increase the bandwidth of CDPS. For VCSELs which exhibit wide polarization-switching hysteresis loop, the extension of CDPS bandwidth is limited by the time required to modulate the current to cross the width of the hysteresis loop. Accordingly, the optical feedback configuration which results the narrowest hysteresis loop will conduct the largest bandwidth extension.

Tuesday 28 October

Session 3a:  Best Student Papers Date: Tuesday 28 October Time: AM 8:30 - AM 10:00

A six-port circulator based on multimode interference  Paper 7135-24

Author(s): Haifeng Zhou, Zhejiang Univ. (China) As a key nonreciprocal device, the optical circulator builds optical links to several terminals in a circulating manner. The waveguide-type circulator with port count more than four has not been discussed, mainly due to the strict phase matching and adjustment. In this paper, a six-port optical circulator is proposed by introducing the nonreciprocal phase shifts (NPS) into a 3×3 multimode coupler. The structure with Ce:YIG material bonded to SOI waveguide is employed to illustrate the implementation and do the device simulation. There is no complex phase matching in the design, and good performance can be expected with the present fabrication technique. This design scheme can also be easily generalized to the more channel circulators.

Concentric silicon micro-ring resonators with enhanced transmission notch depth  Paper 7135-25

Author(s): Xiaohui Li, Shanghai Jiao Tong Univ. (China) and Kungliga Tekniska H?gskolan (Sweden) In this work, we have analyzed, fabricated and demonstrated concentric micro-ring resonators in silicon-on-insulator (SOI) structure for enhanced transmission notches. The operation principles of the concentric ring resonators are studied by time-domain coupled-mode theory. Directional coupling between concentric rings offers another freedom in designing deep notch optical filters and ultra-sensitive biosensors. The simulations have shown the improvement of the notch depth, evenly distributed mode field and the effect of the resonance shift. The device is demonstrated in silicon-on-insulator structure. Transmission notch depth improvement of ~ 15dB is demonstrated for the 21-20.02-μm-radius double-ring structure comparing with the single 21-μm-radius ring.

Study of Active Width-Reduced Line-Defect Photonic Crystal Waveguides for High Speed Applications  Paper 7135-26

Author(s): Yongbo Tang, Bowen Wang, Zhejiang Univ. (China) We study the electrical and optical characteristic of the width-reduced line-defect photonic crystal waveguides with lateral p-i-n structures on Silicon-on-Insulator substrates. A longitudinal-section-based electrical model is built to take the holes into consideration.

Design and fabrication of visible/mid-infrared dual-band microfilter array  Paper 7135-27

Author(s): Huafeng Liang, Jianjun Lai, Huazhong Univ. of Science and Technology (China) and Wuhan National Lab. for Optoelectronics (China); Zhiping Zhou, Huazhong Univ. of Science and Technology (China) and Georgia Institute of Technology (United States) visible/mid-infrared dual-band filter array is the key component of compact, lightweight, rigid miniature dual-band CCD sensing system. Interference cut-off filter array and interference absorbing filter array have been designed for infrared and visible pass band respectively. A simple, effective and compatible with high temperature deposition process lift-off technique for striping thick infrared film is investigated. Integrating photolithography, ion beam assisted electron beam physical vapor deposition and improved lift-off process, dualband microfilter array with good performance was fabricated on the same sapphire substrate consecutively. Details of design and fabricating procedure are elucidated, and experimental results are presented.

Research on a novel 2×2 subnanosecond magneto-optic switch  Paper 7135-28

Author(s): Xu Chen, Xiamen Univ. (China) An improved high speed 2×2 magneto-optic switch is designed and analyzed in this paper. It consists of theoretical and experimental analysis of optical route, sub-nanosecond trigger impulse signal and Faraday rotator assembly based on high speed magnetic field.

Phase shift of plasmons excited by slits in a metal film illuminated by oblique incident TM plane wave  Paper 7135-29

Author(s): Guangyuan Li, Anshi Xu, Peking Univ. (China) Phase shift between excited plasmons and the oblique incident wave is studied for the first to the best of our knowledge. Rigorous diffraction model using finite element method are used. At small oblique incidences, transmissions through the later-illuminated silt will become larger resulting from more accumulated SPP travelled along the metal. The transmission is very weak at too large incidence. Simulations show that the phase shift is not sensitive to the incident angle, in other words, the intrinsic π phase shift holds for a wide range of incident angles. These phenomena will help to explain the experimental transmission result reported as a function of incident angle of the light.

Session 3b:  Novel Active Devices II Date: Tuesday 28 October Time: AM 8:30 - AM 10:00

Ultra-wide temperature range operation of DFB lasers at 1310 nm and 1490 nm (Invited Paper)  Paper 7135-30

Author(s): Dick T. R. Chen, Nong Chen, Wei Hsin, Steven B. Chen, Paul Chen, Archcom Technology Inc. USA (United States) Single mode operation of 1310 nm and 1490 nm DFB (distributed feedback) lasers across a wide temperature span of 180 C and 170 C has been demonstrated. The lasers showed excellent performances such as high output power and high modulation bandwidth as well.

Highly efficient diode pumped solid state lasers using mixed vanadate crystals Nd:YxGd1-xVO4 for airborne laser communications  Paper 7135-31

Author(s): Nils C. Fernelius, Air Force Research Lab. (United States); Suning Tang, Yuanji Tang, Crystal Research, Inc. (United States) We present, for the first time, comparative studies of laser performance in the mixed vanadate crystals Nd:YxGd1-xVO4 with direct and indirect pumping. The resulting highly efficient miniaturized laser has potential for airborne laser communications.

Ultrafast all-optical switching using intersubband transitions in InGaAs/AlAs/AlAsSb quantum wells (Invited Paper)  Paper 7135-32

Author(s): Hiroshi Ishikawa, National Institute of Advanced Industrial Science and Technology (Japan) Intersubband transition in InGaAs/AlAs/AlAsSb quantum well exhibits all-optical phase modulation effect. Error free demultiplexing operation was demonstrated for 160Gb/s signals.

A strained InGaAs/InAlAs coupled quantum well with polarization-independent large positive electro-refractive index change  Paper 7135-33

Author(s): Zhixin Xu, Zhejiang Univ. of Science and Technology (China) By analyzing the ground eigenstates of an InGaAs/InAlAs symmetric coupled quantum well for zero applied electric field and their changes along with an applied electric field, we find its advantages and disadvantages when it is applied to optical switching device. Hence an optimized coupled quantum well structure—quasi-symmetric coupled quantum well is put forward. To obtain polarization independence, a tensile strain is applied to the quantum well layer. In the case of low applied electric field (F=15 kV/cm) and low absorption loss (for TE mode,α=55.56cm-1; for TM mode, α=75.58cm-1), polarization-independent large electric-field-induced refractive index change (for TE mode, Δn=0.0108; for TM mode, Δn=0.0107) is obtained in the strained InGaAs/InAlAs quasi-symmetric coupled quantum well structure at operating wavelength (λ=1550nm).

Session 4a:  Photonic Integration II Date: Tuesday 28 October Time: AM 10:30 - AM 11:45

Research on photonic components: the perspective of the European Commission (Invited Paper)  Paper 7135-34

Author(s): Gustav Kalbe, European Commission (Belgium)

A novel integrated demultiplexing photodetector with an arc absorbing cavity  Paper 7135-35

Author(s): Xingguang Zhou, Beijing Univ. of Posts and Telecommunications (China) A novel integrated demultiplexing photodetector with an arc absorbing cavity is proposed. It consists of filter cavity and absorbing cavity. The top mirror of the absorbing cavity is designed to be curved, which can increase the times of light reflection and make the light be absorbed more sufficiently. The simulation result indicates that 84.3% quantum efficiency and 0.8nm spectral linewidth can be achieved when the thickness of absorbing layer is only 0.12μm. Also the frequency response bandwidth can reach 26.4 GHz with the 20×20 μm2 active region. As to the experiment, we make use of selective wet-etching method and fabricate the curve cantilever on the substrate to form the arc absorbing cavity.

Integrated wavelength selective switch circuit based on microring resonator (Invited Paper)  Paper 7135-36

Author(s): Yasuo Kokubun, Yokohama National Univ. (Japan)

Lunch Break AM 11:45 - PM 1:30

Session 4b:  Nano Photonics II Date: Tuesday 28 October Time: AM 10:30 - PM 12:00

Semiconductor micro ring lasers (Invited Paper)  Paper 7135-37

Author(s): Marc Sorel, Univ. of Glasgow (United Kingdom) Since their first demonstration almost 30 years ago, Semiconductor Ring Lasers (SRLs) have received increased attention because of their potential for monolithical integration. However, the disadvantages of SRLs such as fabrication complexity and mode instabilities largely overcame their advantages and subsequently dampened their development. In the last few years several groups demonstrated that the presence of two counterpropagating modes in the lasing cavity generates a wide scenario of dynamical behaviours as well as a number of novel device functionalities. It clearly appears now that SRLs are not just a mere alternative to Fabry-Perot lasers but can provide a wide variety of new devices for all-optical signal processing. The most appealing feature of SRLs is the ultrafast directional bistability that occurs between the counterpropagating modes, where the lasing direction can be switched by an external optical signal. Several applications such as all-optical flip-flops for optical memories, signal regeneration and digital signal processing have already been demonstrated. The major challenges that still need to be addresses are the miniaturisation of the devices to decrease the switching time and the extraction of optical power from the devices. Both require a careful design of the ring geometry to minimise the cavity mode perturbation and a thorough optimisation of the fabrication technology to achieve room temperature (RT) and continuous wave (CW) operation. The talk will provide a brief historical perspective on the development of SRLs and will discuss the main technological challenges to achieve RT and CW operation in devices with ring radii as small as 5 um. A number of different ring geometries and output coupling mechanisms will be discussed with the aim of minimizing the cavity dimensions while maintaining an acceptable optical output power. Finally, a few novel integrated optical devices will be presented that take advantage of the unique properties of SRLs. These include the integration of an SRL with a distributed Bragg grating reflector for ultrafast tunability, an SRL with a tunable coupler for Q-switching operation and coupled SRLs for narrow linewidth and stable single mode operation.

Preparation and transmission loss of the nanocrystal and polymer composite Bi4Ti3O12/PEK-c films  Paper 7135-38

Author(s): Hongliang Yang, Wei Ji, Quan Ren, Fujun Zhang, Xinqiang Wang, Shandong Univ. (China) Bismuth titanate, Bi4Ti3O12 (BTO), is a typical ferroelectric material with useful properties for optical memory, piezoelectric and electro-optic devices. Its nano-crystals were compounded by the chemical solution decomposition (CSD) technique. The structure and size of BTO were analyzed by X-ray diffraction (XRD) and transmissive electron microscopy (TEM). Three sorts of composite films BTO/PEK-c with different BTO concentration were prepared by spin-coating method at certain conditions. In this article, the scattering losses in thin films were obtained using the optical waveguide technique. The losses in the films with different BTO weight ratios were compared and analyzed.

To Be Announced (Invited Paper)  Paper 7135-39

Author(s): Hong-Gyu Park, Korea Advanced Institute of Science and Technology (Korea (Republic of))

Porous silicon-based photonic crystal optical devices for polarization band-pass filtering and sensing applications  Paper 7135-40

Author(s): Xiao-yi Lü, Xi'an Jiaotong Univ. (China); Tao Xue, Zhen-hong Jia, Xinjiang Univ. (China) We report on the design of porous silicon based polarization band-pass filters, which is not only have excellent optical properties with p-polarization transmittance and s-polarization reflectance in the NIR field, but also can be used for excellent biosensor and gas sensing applications.

Lunch Break PM 12:00 - PM 1:30

Session 5a:  Nonlinear Photonics Date: Tuesday 28 October Time: PM 1:30 - PM 3:00

Nonlinear optical properties of Nd3+-doped heavy metal silicate glasses  Paper 7135-41

Author(s): Song Zhaoyuan, Yanshan Univ. (China); Liu Xiaodong, Dalian Nationalities Univ. (China); Chen Yuee, Ying Han, Shirui Dong, Lantian Hou, Yanshan Univ. (China) Depending on SiO2, Al2O3, CdO, Li2O, K2O, Na2O and Nd2O3 which were made by different chemical proportioning, heavy metal silicate laser glasses doped with the rare earth ion Nd3+ were prepared by high temperature solid-state reaction method.Their third-order nonlinear optical properties were stuided by the z-scan technique using Q-switched nanosecond Nd: YAG pulse of laser, and the mechanism of the nonlinearity produced was analyzed.

Preparation and luminescence properties of Eu3+-doped cadmium aluminium silicate glasses  Paper 7135-42

Author(s): Yue-e Chen, Zhaoyuan Song, Lantian Hou, Yanshan Univ. (China) We have prepared( 40SiO2-14Al2O3-(40-x)CdO-2Li2O-2K2O-2Na2O -xEu2O3 )Cadmium Aluminium Silicate glasses doped with Europium by high temperature solid-state reaction method. The absorption spectra, excitation spectra, emission spectra are obtained. With the increase of Eu2O3,the absorption peaks are found increasing to the best doped concentration and then reducing ,which is nonlinear relationship. The charge-transfer band is moved to 320 nm due to the addition of Cd2+. We can obtain that the ratio of peak in 591 nm and 615 nm is 0.6-0.75 in general, and is unrelated to doped concentration. By changing concentration of Eu3 +,we can adjust and mix different intensity of light according to the demand.

Nonlinear phenomena analysis of tunable external cavity semiconductor laser with sampled fiber grating  Paper 7135-43

Author(s): Xiaoying He, Yonglin Yu, De-Xiu Huang, Huazhong Univ. of Science and Technology (China); D. N. Wang, The Hong Kong Polytechnic Univ. (Hong Kong China); Shan Jiang, Huazhong Univ. of Science and Technology (China) A theoretical study of nonlinear effects in the tunable external cavity semiconductor laser with sampled fiber grating is presented, which are responsible for hysteresis phenomena, asymmetic side mode suppression ratio or power characteristics.

LD-pumped all-solid-state yellow laser based on frequency-doubled self-Raman laser  Paper 7135-44

Author(s): Zhichao Wang, Shenzhen Univ. (China) Powerful yellow light generation has attracted increased attention in recent years. The yellow laser at the wavelength range of 550-630 nm has been required by many applications, such as laser medicine, Bose-Einstein condensation, coastal bathymetry and laser display. In this paper, we report an actively Q-switched yellow laser based on frequency-doubled vanadate crystal self-Raman laser. We present the results of our study on the self-Raman yellow laser. By optimizing the resonator, an efficient yellow laser was achieved.

Second harmonic generation in periodically poled lithium niobate waveguide using femtosecond laser pulses  Paper 7135-45

Author(s): Shuanggen Zhang, Jianghong Yao, Qing Shi, Zhangchao Huang, Jue Wang, Fuyun Lu, Nankai Univ. (China) We present in this letter the fabrication and characterization of thermally stable type II waveguides in Z-cut periodically poled Lithium Niobate crystals. The waveguides were fabricated by using a femto-second laser, and utilized for second-harmonic generation. Our experiments have shown that a quasi-phase matching wavelength of 1548.2nm, a tuning bandwidth of 2 nm, and a tuning temperature range of 150.4±1.6℃ can be achieved.

The nonlinear optical performance of Ho3+-doped borosilicate glass  Paper 7135-46

Author(s): Jian Fu, Dalian Jiao Tong Univ. (China); Xiao-Dong Liu, Dalian Nationalities Univ. (China); Zhao-yuan Song, Yanshan Univ. (China) Both the third-order nonlinear coefficients of our Ho3+-doped borosilicate glasses are one order larger than those of the matrix glass. All the experimental results show that our glasses have a good protection performance for the 532nm-laser.

Session 5b:  Novel Active Devices III Date: Tuesday 28 October Time: PM 1:30 - PM 3:00

Frequency modulated lasers for high-speed and long-haul data transmission (Invited Paper)  Paper 7135-47

Author(s): Shinji Matsuo, Takaaki Kakitsuka, NTT Photonics Labs. (Japan)

Single dye molecule laser via energy transfer mechanism  Paper 7135-48

Author(s): Guangcun Shan, Wei Huang, Fudan Univ. (China) Show Abstract  Motivated by the recent progresses in single-molecule manipulation, this work presents the model and simulations of a single dye molecule laser device, which consists of a single dye molecule as an acceptor inside an optical microcavity pumped by multiple donors via the intermolecular resonance energy transfer mechanism. The photon intensity is calculated at the emission peaks of donor and acceptor dyes for different pump powers and donor numbers. Finally, it is demonstrated that stimulated emission gains a distinct advantage over spontaneous emission under appropriate conditions. This work would have many important applications in a various fields of nanotechnology in future. Motivated by the recent progresses in single-molecule manipulation, this work presents the model and simulations of a single dye molecule laser device, which consists of a single dye molecule as an acceptor inside an optical microcavity pumped by multiple donors via the intermolecular resonance energy transfer mechanism. The photon intensity is calculated at the emission peaks of donor and acceptor dyes for different pump powers and donor numbers. Finally, it is demonstrated that stimulated emission gains a distinct advantage over spontaneous emission under appropriate conditions. This work would have many important applications in a various fields of nanotechnology in future.   Motivated by the recent progresses in single-molecule manipulation, this work presents the model and simulations of a single dye molecule laser device, which consists of a single dye molecule as an acceptor inside an optical microcavity pumped by multiple donors via the intermolecular resonance energy transfer mechanism. The photon intensity is calculated at the emission peaks of donor and acceptor dyes for different pump powers and donor numbers. Finally, it is demonstrated that stimulated emission gains a distinct advantage over spontaneous emission under appropriate conditions. This work would have many important applications in a various fields of nanotechnology in future.

Quantum cascade lasers based on vertical and diagonal active regions  Paper 7135-49 Author(s): Quankui Yang, Wolfgang Bronner, Frank Fuchs, Rolf Aidam, Christian Manz, Rainer L?sch, Nicola Schulz, Klaus K?hler, Joachim Wagner, Fraunhofer-Institut für Angewandte Festk?rperphysik (Germany)  In this presentation, we report QC lasers based on active regions containing a combination of both the advantage of a "vertical-transition" to enhance the quantum efficiency and the advantage of a "diagonal-transition" to increase the lifetime of the upper laser level (the sum-up of above-mentioned two transitions is equivalent to a "slightly-diagonal" transition). The QC lasers are based on either GaInAs/AlInAs emitting at 4.6 μm grown strain-balanced on InP substrates, or GaInAs/AlAsSb emitting at 3.7 μm grown lattice-matched on InP substrates. For the GaInAs/AlInAs-on-InP QC lasers mounted epi-layer up with as-cleaved facets, the maximum peak power (100 ns, 1 kHz operation condition) per facet reaches 1.8 W and exhibits a maximum wall-plug efficiency of 6.4% at room temperature, for a typical ridge size of 16 μm x 3000 μm. In pulsed mode the maximum operation temperature of the lasers is 400 K.

The modeling and characterization of simple semiconductor wafers  Paper 7135-50

Author(s): Junewen Chen, Chung-Hua Univ. (Taiwan) The modeling and characterization of simple semiconductor wafers of GaAs, InP, etc. as passive laser modulators that give burst of Q-switched pulse and Q-switched mode-locking pulses train will be presented in detail.

A novel bottom-emitting one-dimensional VCSEL's array  Paper 7135-51

Author(s): Jinjiang Cui, Yongqiang Ning, Te Li, Yan Zhang, Guangyu Liu, Xing Zhang, Zhenfu Wang, Jingjing Shi, Li Qin, Lijun Wang, Changchun Institute of Optics, Fine Mechanics and Physics (China) High-power VCSELs emitting at near infrared wavelength are widely required for solid-state laser pumping, numerous medical applications, high-resolution printing and free-space optical data communication, where high beam qualities are essential. In this work, we present a novel arrangement of one dimentional VCSEL’s array with different aperture size and center spacing to obtain high power density and Gaussian far-field distribution. This array is composed of 5 symmetrical-arrange elements of 200μm, 150μm and 100μm separately. The performance of this novel 1-D array is discussed in detail. We also make a comparison with single device and conventional 2-D array to illustrate the superiority and feature of this 1-D array construction.

Session 6a:  Optical Switches and Modulators I Date: Tuesday 28 October Time: PM 3:30 - PM 5:30

Transformation Optics and Invisibility Cloaks (Invited Paper)  Paper 7135-52

Author(s): Min Qiu, Kungliga Tekniska H?gskolan (Sweden) In this talk, I will review our recent work on transformation otpics and invisibility cloaks. We confirmed the invisibility of ideal cylindrical cloaks analytically based on full-wave equations, showed cloaks’ tolerance to perturbations, studied properties of general cloaks with arbitrary shape and confirmed their perfect invisibility, investigated simplified cloaks’ scattering characteristics, and also proposed the optimal model for the simplified cloaks.

Investigating the effect of insertion loss due to Fresnel reflection at the lithium niobate air interfaces via the output characteristic curve of electro-optic modulation  Paper 7135-53

Author(s):

Linearization of periodic phase response for liquid crystal modulator  Paper 7135-54

Author(s): Wenjian Jia, Yubo Li, Chen Li, Minghua Wang, Yang Jianyi, Zhejiang Univ. (China) Liquid crystal modulator is now widely studied for its modulation characteristics. This paper presents a logarithm driving signal model to convert the nonlinear phase response of liquid crystal to linear response between 0 and pi. Driven by this periodic logarithm signal, liquid crystal modulator’s phase response range diminishes with the frequency of driving signal increasing. This paper proposes a method of correcting the LCM’s phase response curve to overcome this problem. The experimental results indicate that obtaining the linear phase response of liquid crystal between 0 and pi with different-frequency driving signals is feasible.

A novel wavelength switchable fiber ring laser  Paper 7135-55

Author(s): Fei Wang, Chongqing Institute of Technology (China) We demonstrate a fiber ring laser with a dispersion compensation fiber (DCF) and a delayed interferometer (DI), which is able to switch eleven wavelengths one by one. In ring cavity, DCF supplies different effective cavity lengths for different wavelengths, DI generates a wavelength comb corresponding to the ITU grid, a flat-gain erbium-doped fiber amplifier (EDFA) provides uniform gain for each lasting wavelength, and a semiconductor optical amplifier (SOA) not only acts as active modulator, but also alleviates homogeneous broadening effect of EDFA. Stable pulse trains with a pulsewidth about 40 ps at 10 GHz have been obtained by injecting external optical control signals into the laser. Wavelength switching process among eleven wavelengths is achieved by merely tuning an intracavity optical delay line.

Compact optical modulator based on carrier induced gain of an InP/InGaAsP microdisk cavity integrated on SOI  Paper 7135-56

Author(s): Liu Liu, Joris Van Campenhout, Günther Roelkens, Univ. Gent (Belgium); Richard Soref, Air Force Research Lab. (United States); Dries Van Thourhout, Univ. Gent (Belgium); Pedro Rojo-Romeo, Philippe Regreny, Christian Seassal, Ecole Centrale de Lyon (France); Jean-Marc Fédéli, Commissariat à l'Energie Atomique (France); Roel Baets, Univ. Gent (Belgium) We demonstrate a modulator with an III-V micro-disk cavity integrated on an SOI circuit based on the carrier induced gain effect. We have achieved 19dB extinction ratio with sub milli-ampere bias current, and 2.73Gbps bit rate without any special driving techniques.

Ultra-high-speed SOA-based full adder with PolSK modulated signals  Paper 7135-57

Author(s): Peili Li, Nanjing Univ. of Posts and Telecommunications (China); De-Xiu Huang, Huazhong Univ. of Science and Technology (China) In this paper, a novel scheme for an ultrahigh-speed all-optical full adder based on parallel dual-pump our-wave mixing (FWM) and orthogonal dual-pump FWM, in two SOAs is proposed. Using the broad-band dynamic model of the dual-pump FWM in SOA, it is theoretically realized by numerical simulation. In this scheme, polarization-shift-keying (PolSK) modulation format is used. Due to the constant intensity nature of the signals, pattern-dependent degradation can be reduced in this SOA-based device. This full adder only uses two SOAs, so it is simple and compact. Furthermore, this scheme can provide ultrafast operation in virtue of using the FWM effect.

Reflection mechanism in the total-internal-reflection optical waveguide switch  Paper 7135-58

Author(s): Wei Qi, Hui Yu, Jiate Zhao, Jianyi Yang, Minghua Wang, Xiaoqing Jiang, Zhejiang Univ. (China) The modal expansion method is employed to study the reflection mechanism in the total-internal-reflection(TIR) switch. Due to the confinement of the waveguide, the beam reflection within the TIR switch is completely different from that in the free space. Its essence is the degeneracy between the even and odd modes in the waveguide of the reflection region.

Session 6b:  Si Photonics Date: Tuesday 28 October Time: PM 3:30 - PM 5:30

Integrated photonic beam former employing continuously tunable ring resonator-based delays in CMOS-compatible LPCVD waveguide technology (Invited Paper)  Paper 7135-59

Author(s): Chris Roeloffzen, Arjan Meijerink, Leimeng Zhuang, David Marpaung, Wim C. van Etten, Univ. Twente (Netherlands); Rene G. Heideman, Arne Leinse, Marcel Hoekman, LioniX, BV (Netherlands)

Terahertz wave dielectric properties of P-type silicon  Paper 7135-60

Author(s): Jiusheng Li, China Jiliang Univ. (China) we have measured the absorption spectrum of three kind resistivity p-type silicons by backward-wave oscillator (BWO).The absorption spectrum is examined and analyzed by least square method. The refractive index, absorption coefficient, and dielectric functions of various resistivity p-type silicons are obtained in the frequency range extending from 0.23 THz to 0.375 THz. The experimental results indicate that the absorption coefficient of the p-type silicons are decreased with the resistivity increase and its least absorption coefficient equals 3.87×10-4 cm- 1. Our results demonstrate that the applicability of the backward-wave oscillator THz absorption spectroscopy to p-type silicon characteristic analysis by calculating the absorption spectra. This work establishes the basic spectra data for the various resistivity p-type silicons are very significative to design the terahertz waveguide with low loss.

To Be Announced (Invited Paper)  Paper 7135-61

Author(s): Mehdi Asghari, Kotura, Inc. (United States)

The effect of argon ion implantation and preanodization argon ion implantation on photoluminescence of porous silicon  Paper 7135-62

Author(s): Xiao-yi Lü, Xi'an Jiaotong Univ. (China); Tao Xue, Zhen-hong Jia, Xinjiang Univ. (China) Photoluminescence (PL) of Ar+ Implanted Porous Silicon and Porous Structure of Ar+-Implanted Silicon (porous silicon by preanodization ion implantation) at energy of middle-energy (30keV) are investigated to gain insight into the PL properties and PL mechanism.

Generation of Bright Femtosecond Pulse by Utilizing Nonlinear Process in Silicon-on-Insulator Waveguides  Paper 7135-63

Author(s): Jianwei Wu, Huazhong Univ. of Science and Technology (China) A project of bright femtosecond pulse generation has been presented and demonstrated in silicon-on-insulator (SOI) optical waveguides by utilizing the nonlinear process that includes the stimulated Raman scattering (SRS), non-degenerate two-photon absorption (TPA) and cross-phase modulation (XPM), which can be described that a continue wave (CW) and a ultrafast dark pulse are co-propagating in silicon waveguide as a result that the CW will be modulated inversely by the dark pulse during the propagation, and the bright pulse with pulsewidth (full width at half maximum-FWHM) of only several tens of femtosecond can be achieved. Moreover, the properties of generated bright femtosecond pulse are strongly dependent on the input power, waveguide length and dark pulse width.

100 mm Integration of III-V and Silicon-on-Insulator Wafers for the Realization of Distributed Feedback Silicon Evanescent Lasers  Paper 7135-163

Author(s): Di Liang, Alexander W. Fang, John E. Bowers, Univ. of California/Santa Barbara (United States)